Laser-Based Floating Zone Furnace(LFZ) *English site

Quantum Design is proud to introduce a laser-based floating zone (L-FZ) furnace. This novel system, based on technology developed by the RIKEN CEMS (Center for Emergent Matter Science) institute in Japan, promises the opportunity to grow materials unable to be grown by more traditional floating zone methods.

Quantum Design Japan is proud to introduce a laser-based floating zone (LFZ) furnace with 1K to 2KW power laser. This novel system promises the opportunity to grow materials unable to be grown by more traditional floating zone methods and realizes higher single crystal quality of higher-melting-point materials. Five laser heads have high uniformity of irradiation intensity (95% or more) and the adoption of laser profile developed by RIKEN institute in Japan enables the relaxation of thermal stress on crystals to prevent the occurrence of cracks in crystals.

In addition, because the irradiation spot by laser is small, there is little adhesion on to the inner surface of the quartz tube, making it possible to grow single crystals continuously even with high evaporation materials.

The temperature of the melting zone can be directly monitored during crystallization process up to a high temperature range of 3000°C using a patented technology of radiation thermometer.


Special Features

Laser beam profile optimization -patented technology

A more gradual irradiation intensity distribution is adopted in the direction of crystal growth to help minimize thermal stresses within the material.
This optimization of the laser beam profile reduces thermal stresses on crystals as compared against a conventional laser FZ furnace consisting of a traditional top-hat laser power profile.
The irradiation intensity distribution of 5 laser head is circumferentially uniform.
A circumferential homogeneity of over 95% of irradiation intensity on the outer surface of the raw material is achieved (excellent circumferential uniformity as compared to a lamp-FZ platform).

Temperature can be precisely monitored and controlled in real time:

Temperature of molten zone can be directly monitored and recorded throughout the crystal growth process is possible with temperature range from 800 up to 3000 ℃ via a customized radiation thermometer.

Temperature monitoring spatial resolution of better than φ1.5mm.
The temperature of the melting zone can be controlled to the target temperature on the phase diagram with minimal temperature overshooting over a narrow 1℃ temperature window, ensuring growth of the desired compound.
Ideal for crystal production by the TSFZ method requiring long-term, unattended temperature control over a narrow 1℃ temperature window.
Reproducibility of measured temperature is within +/-1℃ .

Ideal for materials with high volatility

Compared to a traditional Halogen or Xenon lamp, the laser generates a much more concentrated energy profile at the FZ region. Less of the feed material is exposed to the higher temperatures generated by the energy source, lessening the amount of evaporative material which can contaminate the quartz tube.
The focused laser power acts to ablate any evaporates that may contaminate the quartz tube, leaving the quartz tube relatively clean in the laser-beam pass region.
Optional thin-wall protective quartz sleeves are available to help further protect the inside diameter of the quartz tube from damage or contamination.

Crystal growth remote control by PC and Smart Phone

Able to observe and control melting image and melting temperature with PCs and smartphones from the laboratory desk, home, or anywhere outside.
Direct observation of melting zone temperature and zone image dramatically improves stable melting zone maintenance control

Single crystals of high refractory materials (Tm > 2000 C) are easily grown:

Ruby(Tm ~ 2072C)

Ruby with such a clean crystal surface can not be grown in a Ha-FZ furnace.

SmB6(Tm = 2345C)※A topological insulator

Materials with refractory and high conductivity properties can not be grown in a Ha-FZ furnac

Y-type Ferrite; Ba2Co2Fe12O22 (Tm 1440 C)
(room temperature multi-ferroic materials)

Single crystals of materials with incongruent properties at melting temp; due to a narrow melting temperature range (10C), this material can not be easily grown by Ha-FZ method.

Heating control Laser head 5 laser head
Laser power for FZ  2kW(400W×5)、 1kW(200W ×5)
FZ temperature range 500 ℃~3000 ℃(material dependent )
FZ temperature monitering 500 ℃~3000 ℃(radiation thermometer
Temperature reproducibility ±1 ℃(over entire temperature range)
Crystal growth control Crystal growth max. length 150 mm
Crystal max. diameter 8 mm
Growth speed / rotation speed 0.1~200 mm(mm/hr)、0.1~40 rpm
FZ region vacuum / pressure 1×10-4 torr ~ 10 bar
FZ environment User-supplied external gas
Growth monitoring High vision Full HDTV camera
Growth control Ubiquitous control possible by PC/Smartphone from your desk/home for remote monitoring
Others Instrument footprint W250x D200 x H220 (cm)







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